Project Outputs

The COSMIC Prosperity Partnership is committed not just to technical innovation, but to sharing knowledge, building capacity, and engaging the wider research and industrial community. Below are some of the key outputs to date:

Training & Capacity Building

ALD Academy – University of Bath, June 2024

A two-day foundational training event in Atomic Layer Deposition (ALD), open to all PDRAs and PhDs across partner institutions.

  • Participants: 50 attendees from 7 countries
  • Focus: Fundamentals of ALD, networking, cross-discipline collaboration
  • Impact: Early-career researcher development and knowledge exchange
Highlights from Year 1
  • Established baseline protocols for SnO thin-film production
  • Developed deposition and treatment methods for p-type materials
  • Created functional p-channel TFTs using bottom-gate staggered architecture
  • Demonstrated CMOS inverters combining SnO (p-type) and IGZO (n-type)
  • Launched new collaborations with:
    • Prof. Matt Graham (University of Colorado) – ultrabroadband photoconductivity
    • Dr. Babak Bakhit (Uppsala University) – thin film characterisation
Conferences & Engagement

EUROCVD & ALD 2024 – Catania, Italy 

Full project delegation attended this major international conference.

Contributions:

  • Poster presentations
  • Technical talks
  • Networking with global ALD and semiconductor experts
Publications & Dissemination

Published / Accepted

  • “Defect Density of States of Tin Oxide and Copper Oxide p-type Thin-film Transistors”
    Mattsson et al., Adv. Electron. Mater., Accepted February 2025
  • “Atomic Layer Deposited Ta₂O₅: from Process Optimization to Thin Films Characterization”
    Xiao et al., Submitted to AIP Advances, February 2025

In Preparation

  • “Influence of Al doping on the semiconducting properties of p-type SnO”
  • “Amorphous p-channel SnO thin film transistors for flexible and large-area electronics”
  • “Atomic layer deposited p-type SnO TFTs: controlling surface morphology and device characteristics”
  • “p-type SnO TFTs fabricated at low temperature (<200°C) using a tin amide precursor”